| PART |
Description |
Maker |
| IRFB3307ZGPBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRFB4310GPBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRFB3006PBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRF8915 |
HEXFETPower MOSFET
|
http://
IRF[International Rectifier]
|
| IRLRU3103PBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRF6620 IRF6618TR1 |
HEXFETPower MOSFET HEXFETPower MOSFET
|
Microchip Technology, Inc.
IRF[International Rectifier]
|
| IRLML2030TRPBF |
HEXFETpower MOSFET Compatible with existing Surface Mount Techniques Easier manufacturing
|
TY Semiconductor Co., Ltd
|
| PVY116-T PVY116 |
HEXFETPower MOSFET Photovoltaic Relay Single-Pole, Normally-Open, 0-40V AC/DC, 250mA
Microelectronic Power IC
|
IRF[International Rectifier]
|
| IRF7342PBF |
HEXFETPower MOSFET (VDSS = -55V , RDS(on) = 0.105 ㈢的HEXFET功率MOSFET（减振钢板基本\u003d - 55V的，的RDS（on）\u003d 0.105ヘ）
|
International Rectifier, Corp.
|
| 2N7002K |
N-Ch; 60V (DS) MOSFET; add ESD protect function N沟道0V(D-S) MOSFET;补充的ESD保护功能
N-Channel 60-V (D-S) MOSFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| IXTA10N60P IXTP10N60P IXTI10N60P |
MOSFET N-CH 600V 10A D2-PAK 10 A, 600 V, 0.74 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
PolarHV Power MOSFET
|
Infineon Technologies AG
IXYS CORP
IXYS Corporation
|
